Vishay Siliconix - SQA470EJ-T1_GE3

KEY Part #: K6421258

SQA470EJ-T1_GE3 Pricing (USD) [408942pcs Stock]

  • 1 pcs$0.09045
  • 3,000 pcs$0.07687

Part Number:
SQA470EJ-T1_GE3
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET N-CH 30V 2.25A SC70-6.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs - Modules, Thyristors - DIACs, SIDACs, Diodes - RF, Transistors - JFETs, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Zener - Single, Transistors - FETs, MOSFETs - Single and Transistors - Programmable Unijunction ...
Competitive Advantage:
We specialize in Vishay Siliconix SQA470EJ-T1_GE3 electronic components. SQA470EJ-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQA470EJ-T1_GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SQA470EJ-T1_GE3 Product Attributes

Part Number : SQA470EJ-T1_GE3
Manufacturer : Vishay Siliconix
Description : MOSFET N-CH 30V 2.25A SC70-6
Series : Automotive, AEC-Q101, TrenchFET®
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 2.25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 4.5V
Rds On (Max) @ Id, Vgs : 65 mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id : 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 6nC @ 4.5V
Vgs (Max) : ±12V
Input Capacitance (Ciss) (Max) @ Vds : 440pF @ 20V
FET Feature : -
Power Dissipation (Max) : 13.6W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : PowerPAK® SC-70-6 Single
Package / Case : PowerPAK® SC-70-6

You May Also Be Interested In