SQA470EJ-T1_GE3 Pricing (USD) [408942pcs Stock]
- 1 pcs$0.09045
- 3,000 pcs$0.07687
- Part Number:
- SQA470EJ-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Detailed description:
- MOSFET N-CH 30V 2.25A SC70-6.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Modules, Thyristors - TRIACs, Diodes - Rectifiers - Arrays, Power Driver Modules, Diodes - Bridge Rectifiers, Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - Single and Transistors - Bipolar (BJT) - Arrays ...
- Competitive Advantage:
- We specialize in Vishay Siliconix SQA470EJ-T1_GE3 electronic components. SQA470EJ-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQA470EJ-T1_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQA470EJ-T1_GE3 Product Attributes
Part Number :
SQA470EJ-T1_GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET N-CH 30V 2.25A SC70-6
Series :
Automotive, AEC-Q101, TrenchFET®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
2.25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
2.5V, 4.5V
Rds On (Max) @ Id, Vgs :
65 mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id :
1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
6nC @ 4.5V
Vgs (Max) :
±12V
Input Capacitance (Ciss) (Max) @ Vds :
440pF @ 20V
FET Feature :
-
Power Dissipation (Max) :
13.6W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
PowerPAK® SC-70-6 Single
Package / Case :
PowerPAK® SC-70-6
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