Part Number :
SIHU2N80E-GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET N-CH 800V 2.8A IPAK
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
800V
Current - Continuous Drain (Id) @ 25°C :
2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
2.75 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
19.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
315pF @ 100V
Power Dissipation (Max) :
62.5W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
IPAK (TO-251)
Package / Case :
TO-251-3 Long Leads, IPak, TO-251AB