Vishay Siliconix - SIHU2N80E-GE3

KEY Part #: K6405493

SIHU2N80E-GE3 Pricing (USD) [53440pcs Stock]

  • 1 pcs$0.73167

Part Number:
SIHU2N80E-GE3
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET N-CH 800V 2.8A IPAK.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Transistors - Special Purpose, Transistors - Bipolar (BJT) - Single, Power Driver Modules, Diodes - Zener - Single, Thyristors - SCRs, Diodes - Variable Capacitance (Varicaps, Varactors) and Diodes - Zener - Arrays ...
Competitive Advantage:
We specialize in Vishay Siliconix SIHU2N80E-GE3 electronic components. SIHU2N80E-GE3 can be shipped within 24 hours after order. If you have any demands for SIHU2N80E-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIHU2N80E-GE3 Product Attributes

Part Number : SIHU2N80E-GE3
Manufacturer : Vishay Siliconix
Description : MOSFET N-CH 800V 2.8A IPAK
Series : E
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 800V
Current - Continuous Drain (Id) @ 25°C : 2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 2.75 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 19.6nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 315pF @ 100V
FET Feature : -
Power Dissipation (Max) : 62.5W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : IPAK (TO-251)
Package / Case : TO-251-3 Long Leads, IPak, TO-251AB

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