TK10J80E,S1E Pricing (USD) [37612pcs Stock]
- 1 pcs$1.21125
- 25 pcs$1.20523
- Part Number:
- TK10J80E,S1E
- Manufacturer:
- Toshiba Semiconductor and Storage
- Detailed description:
- MOSFET N-CH 800V TO-3PN.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs - Modules, Diodes - Zener - Arrays, Power Driver Modules, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - RF, Diodes - Zener - Single, Transistors - IGBTs - Arrays and Transistors - Bipolar (BJT) - Single ...
- Competitive Advantage:
- We specialize in Toshiba Semiconductor and Storage TK10J80E,S1E electronic components. TK10J80E,S1E can be shipped within 24 hours after order. If you have any demands for TK10J80E,S1E, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK10J80E,S1E Product Attributes
Part Number :
TK10J80E,S1E
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET N-CH 800V TO-3PN
Series :
π-MOSVIII
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
800V
Current - Continuous Drain (Id) @ 25°C :
10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1 Ohm @ 5A, 10V
Vgs(th) (Max) @ Id :
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
46nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
2000pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
250W (Tc)
Operating Temperature :
150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-3P(N)
Package / Case :
TO-3P-3, SC-65-3
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