IXFN26N90 Pricing (USD) [2736pcs Stock]
- 1 pcs$16.61857
- 10 pcs$15.37137
- 25 pcs$14.12509
- 100 pcs$13.12793
- 250 pcs$12.04780
- Part Number:
- IXFN26N90
- Manufacturer:
- IXYS
- Detailed description:
- MOSFET N-CH 900V 26A SOT-227B.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - FETs, MOSFETs - RF, Transistors - Bipolar (BJT) - Arrays, Diodes - Bridge Rectifiers, Diodes - RF, Transistors - Bipolar (BJT) - Single, Transistors - IGBTs - Modules and Transistors - Bipolar (BJT) - Arrays, Pre-Biased ...
- Competitive Advantage:
- We specialize in IXYS IXFN26N90 electronic components. IXFN26N90 can be shipped within 24 hours after order. If you have any demands for IXFN26N90, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFN26N90 Product Attributes
Part Number :
IXFN26N90
Manufacturer :
IXYS
Description :
MOSFET N-CH 900V 26A SOT-227B
Series :
HiPerFET™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
900V
Current - Continuous Drain (Id) @ 25°C :
26A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
300 mOhm @ 13A, 10V
Vgs(th) (Max) @ Id :
5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs :
240nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
10800pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
600W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Chassis Mount
Supplier Device Package :
SOT-227B
Package / Case :
SOT-227-4, miniBLOC
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