Infineon Technologies - IRFR3607PBF

KEY Part #: K6408069

IRFR3607PBF Pricing (USD) [755pcs Stock]

  • 1 pcs$0.72749
  • 10 pcs$0.65725
  • 100 pcs$0.52806
  • 500 pcs$0.41071
  • 1,000 pcs$0.32191

Part Number:
IRFR3607PBF
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET N-CH 75V 80A DPAK.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs - Modules, Diodes - Rectifiers - Single, Transistors - Programmable Unijunction, Diodes - Zener - Arrays, Thyristors - DIACs, SIDACs, Diodes - RF, Transistors - FETs, MOSFETs - Single and Transistors - FETs, MOSFETs - Arrays ...
Competitive Advantage:
We specialize in Infineon Technologies IRFR3607PBF electronic components. IRFR3607PBF can be shipped within 24 hours after order. If you have any demands for IRFR3607PBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRFR3607PBF Product Attributes

Part Number : IRFR3607PBF
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 75V 80A DPAK
Series : HEXFET®
Part Status : Discontinued at Digi-Key
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 75V
Current - Continuous Drain (Id) @ 25°C : 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 9 mOhm @ 46A, 10V
Vgs(th) (Max) @ Id : 4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs : 84nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 3070pF @ 50V
FET Feature : -
Power Dissipation (Max) : 140W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : D-Pak
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63

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