Toshiba Semiconductor and Storage - SSM6J507NU,LF

KEY Part #: K6421479

SSM6J507NU,LF Pricing (USD) [603363pcs Stock]

  • 1 pcs$0.06777
  • 3,000 pcs$0.06743

Part Number:
SSM6J507NU,LF
Manufacturer:
Toshiba Semiconductor and Storage
Detailed description:
MOSFET P-CH 30V 10A 6UDFN.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Bridge Rectifiers, Thyristors - TRIACs, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - IGBTs - Arrays, Diodes - RF, Transistors - Bipolar (BJT) - RF, Transistors - Programmable Unijunction and Transistors - FETs, MOSFETs - Single ...
Competitive Advantage:
We specialize in Toshiba Semiconductor and Storage SSM6J507NU,LF electronic components. SSM6J507NU,LF can be shipped within 24 hours after order. If you have any demands for SSM6J507NU,LF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SSM6J507NU,LF Product Attributes

Part Number : SSM6J507NU,LF
Manufacturer : Toshiba Semiconductor and Storage
Description : MOSFET P-CH 30V 10A 6UDFN
Series : U-MOSVI
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4V, 10V
Rds On (Max) @ Id, Vgs : 20 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id : 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 20.4nC @ 4.5V
Vgs (Max) : +20V, -25V
Input Capacitance (Ciss) (Max) @ Vds : 1150pF @ 15V
FET Feature : -
Power Dissipation (Max) : 1.25W (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 6-UDFNB (2x2)
Package / Case : 6-WDFN Exposed Pad