IXFK52N60Q2 Pricing (USD) [4482pcs Stock]
- 1 pcs$10.68348
- 25 pcs$10.63033
- Part Number:
- IXFK52N60Q2
- Manufacturer:
- IXYS
- Detailed description:
- MOSFET N-CH 600V 52A TO-264.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - DIACs, SIDACs, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Bridge Rectifiers, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - IGBTs - Single, Thyristors - SCRs and Diodes - Zener - Single ...
- Competitive Advantage:
- We specialize in IXYS IXFK52N60Q2 electronic components. IXFK52N60Q2 can be shipped within 24 hours after order. If you have any demands for IXFK52N60Q2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFK52N60Q2 Product Attributes
Part Number :
IXFK52N60Q2
Manufacturer :
IXYS
Description :
MOSFET N-CH 600V 52A TO-264
Series :
HiPerFET™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
52A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
115 mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id :
4.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs :
198nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
6800pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
735W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-264AA (IXFK)
Package / Case :
TO-264-3, TO-264AA
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