Infineon Technologies - IRF8327STR1PBF

KEY Part #: K6403168

[2450pcs Stock]


    Part Number:
    IRF8327STR1PBF
    Manufacturer:
    Infineon Technologies
    Detailed description:
    MOSFET N-CH 30V 14A SQ.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Single, Thyristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - Arrays, Diodes - Bridge Rectifiers, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Zener - Arrays, Transistors - IGBTs - Single and Transistors - Bipolar (BJT) - RF ...
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    We specialize in Infineon Technologies IRF8327STR1PBF electronic components. IRF8327STR1PBF can be shipped within 24 hours after order. If you have any demands for IRF8327STR1PBF, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IRF8327STR1PBF Product Attributes

    Part Number : IRF8327STR1PBF
    Manufacturer : Infineon Technologies
    Description : MOSFET N-CH 30V 14A SQ
    Series : -
    Part Status : Obsolete
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 30V
    Current - Continuous Drain (Id) @ 25°C : 14A (Ta), 60A (Tc)
    Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
    Rds On (Max) @ Id, Vgs : 7.3 mOhm @ 14A, 10V
    Vgs(th) (Max) @ Id : 2.4V @ 25µA
    Gate Charge (Qg) (Max) @ Vgs : 14nC @ 4.5V
    Vgs (Max) : ±20V
    Input Capacitance (Ciss) (Max) @ Vds : 1430pF @ 15V
    FET Feature : -
    Power Dissipation (Max) : 2.2W (Ta), 42W (Tc)
    Operating Temperature : -40°C ~ 150°C (TJ)
    Mounting Type : Surface Mount
    Supplier Device Package : DIRECTFET™ SQ
    Package / Case : DirectFET™ Isometric SQ