[13434pcs Stock]
- Part Number:
- NVB5860NT4G
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET N-CH 60V 169A D2PAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - RF, Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - Arrays, Transistors - JFETs, Thyristors - SCRs - Modules, Transistors - IGBTs - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased and Transistors - IGBTs - Arrays ...
- Competitive Advantage:
- We specialize in ON Semiconductor NVB5860NT4G electronic components. NVB5860NT4G can be shipped within 24 hours after order. If you have any demands for NVB5860NT4G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NVB5860NT4G Product Attributes
Part Number :
NVB5860NT4G
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 60V 169A D2PAK
Series :
-
Part Status :
Obsolete
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
60V
Current - Continuous Drain (Id) @ 25°C :
220A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
3 mOhm @ 75A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
180nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
10760pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
283W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
D2PAK-3
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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