Manufacturer :
Transphorm
Description :
GANFET N-CH 650V 20A PQFN
Technology :
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) :
650V
Current - Continuous Drain (Id) @ 25°C :
20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
130 mOhm @ 13A, 8V
Vgs(th) (Max) @ Id :
2.6V @ 300µA
Gate Charge (Qg) (Max) @ Vgs :
14nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds :
760pF @ 400V
Power Dissipation (Max) :
96W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
3-PQFN (8x8)
Package / Case :
3-PowerDFN