R6020KNZ1C9 Pricing (USD) [30967pcs Stock]
- 1 pcs$1.46753
- 10 pcs$1.30888
- 100 pcs$1.01824
- 500 pcs$0.82453
- 1,000 pcs$0.69538
- Part Number:
- R6020KNZ1C9
- Manufacturer:
- Rohm Semiconductor
- Detailed description:
- NCH 600V 20A POWER MOSFET.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs - Modules, Power Driver Modules, Transistors - IGBTs - Arrays, Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - Single, Transistors - IGBTs - Single, Transistors - Programmable Unijunction and Transistors - JFETs ...
- Competitive Advantage:
- We specialize in Rohm Semiconductor R6020KNZ1C9 electronic components. R6020KNZ1C9 can be shipped within 24 hours after order. If you have any demands for R6020KNZ1C9, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
R6020KNZ1C9 Product Attributes
Part Number :
R6020KNZ1C9
Manufacturer :
Rohm Semiconductor
Description :
NCH 600V 20A POWER MOSFET
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
196 mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id :
5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
40nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1550pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
231W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-247
Package / Case :
TO-247-3
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