IRFSL7434PBF Pricing (USD) [51903pcs Stock]
- 1 pcs$0.75333
- 1,000 pcs$0.72320
- Part Number:
- IRFSL7434PBF
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 40V 195A TO262.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - TRIACs, Diodes - RF, Transistors - Bipolar (BJT) - Arrays, Transistors - FETs, MOSFETs - Single, Diodes - Rectifiers - Arrays, Diodes - Rectifiers - Single and Transistors - JFETs ...
- Competitive Advantage:
- We specialize in Infineon Technologies IRFSL7434PBF electronic components. IRFSL7434PBF can be shipped within 24 hours after order. If you have any demands for IRFSL7434PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFSL7434PBF Product Attributes
Part Number :
IRFSL7434PBF
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 40V 195A TO262
Series :
HEXFET®, StrongIRFET™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
40V
Current - Continuous Drain (Id) @ 25°C :
195A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, Vgs :
1.6 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id :
3.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
324nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
10820pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
294W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-262
Package / Case :
TO-262-3 Long Leads, I²Pak, TO-262AA
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