Toshiba Semiconductor and Storage - TK6A60W,S4VX

KEY Part #: K6418089

TK6A60W,S4VX Pricing (USD) [51384pcs Stock]

  • 1 pcs$0.84122
  • 50 pcs$0.83704

Part Number:
TK6A60W,S4VX
Manufacturer:
Toshiba Semiconductor and Storage
Detailed description:
MOSFET N CH 600V 6.2A TO-220SIS.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Power Driver Modules, Transistors - FETs, MOSFETs - Single, Transistors - Bipolar (BJT) - Arrays, Transistors - JFETs, Transistors - IGBTs - Modules, Thyristors - SCRs, Transistors - Bipolar (BJT) - Arrays, Pre-Biased and Diodes - Rectifiers - Arrays ...
Competitive Advantage:
We specialize in Toshiba Semiconductor and Storage TK6A60W,S4VX electronic components. TK6A60W,S4VX can be shipped within 24 hours after order. If you have any demands for TK6A60W,S4VX, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TK6A60W,S4VX Product Attributes

Part Number : TK6A60W,S4VX
Manufacturer : Toshiba Semiconductor and Storage
Description : MOSFET N CH 600V 6.2A TO-220SIS
Series : DTMOSIV
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 6.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 750 mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id : 3.7V @ 310µA
Gate Charge (Qg) (Max) @ Vgs : 12nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 390pF @ 300V
FET Feature : Super Junction
Power Dissipation (Max) : 30W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220SIS
Package / Case : TO-220-3 Full Pack

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