Infineon Technologies - IRLSL3036PBF

KEY Part #: K6398309

IRLSL3036PBF Pricing (USD) [15034pcs Stock]

  • 1 pcs$2.63098
  • 10 pcs$2.34849
  • 100 pcs$1.92586
  • 500 pcs$1.55946
  • 1,000 pcs$1.31521

Part Number:
IRLSL3036PBF
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET N-CH 60V 195A TO262.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Modules, Diodes - RF, Thyristors - DIACs, SIDACs, Thyristors - TRIACs, Transistors - Bipolar (BJT) - RF, Diodes - Zener - Single, Thyristors - SCRs and Transistors - Special Purpose ...
Competitive Advantage:
We specialize in Infineon Technologies IRLSL3036PBF electronic components. IRLSL3036PBF can be shipped within 24 hours after order. If you have any demands for IRLSL3036PBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRLSL3036PBF Product Attributes

Part Number : IRLSL3036PBF
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 60V 195A TO262
Series : HEXFET®
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 195A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 2.4 mOhm @ 165A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 140nC @ 4.5V
Vgs (Max) : ±16V
Input Capacitance (Ciss) (Max) @ Vds : 11210pF @ 50V
FET Feature : -
Power Dissipation (Max) : 380W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-262
Package / Case : TO-262-3 Long Leads, I²Pak, TO-262AA