[3277pcs Stock]
- Part Number:
- IXTD3N60P-2J
- Manufacturer:
- IXYS
- Detailed description:
- MOSFET N-CH 600.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Single, Transistors - FETs, MOSFETs - Single, Diodes - Rectifiers - Arrays, Diodes - Zener - Arrays, Transistors - Bipolar (BJT) - RF, Diodes - Variable Capacitance (Varicaps, Varactors) and Transistors - JFETs ...
- Competitive Advantage:
- We specialize in IXYS IXTD3N60P-2J electronic components. IXTD3N60P-2J can be shipped within 24 hours after order. If you have any demands for IXTD3N60P-2J, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTD3N60P-2J Product Attributes
Part Number :
IXTD3N60P-2J
Manufacturer :
IXYS
Description :
MOSFET N-CH 600
Series :
PolarHV™
Part Status :
Last Time Buy
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
2.9 Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id :
5.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs :
9.8nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
411pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
70W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
Die
Package / Case :
Die
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