BSB165N15NZ3GXUMA1 Pricing (USD) [54861pcs Stock]
- 1 pcs$0.71272
- Part Number:
- BSB165N15NZ3GXUMA1
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 150V 9A WDSON-2.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Arrays, Thyristors - DIACs, SIDACs, Diodes - Zener - Arrays, Transistors - JFETs, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - IGBTs - Single, Transistors - Bipolar (BJT) - Single and Diodes - RF ...
- Competitive Advantage:
- We specialize in Infineon Technologies BSB165N15NZ3GXUMA1 electronic components. BSB165N15NZ3GXUMA1 can be shipped within 24 hours after order. If you have any demands for BSB165N15NZ3GXUMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSB165N15NZ3GXUMA1 Product Attributes
Part Number :
BSB165N15NZ3GXUMA1
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 150V 9A WDSON-2
Series :
OptiMOS™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
150V
Current - Continuous Drain (Id) @ 25°C :
9A (Ta), 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
8V, 10V
Rds On (Max) @ Id, Vgs :
16.5 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id :
4V @ 110µA
Gate Charge (Qg) (Max) @ Vgs :
35nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2800pF @ 75V
FET Feature :
-
Power Dissipation (Max) :
2.8W (Ta), 78W (Tc)
Operating Temperature :
-40°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
MG-WDSON-2, CanPAK M™
Package / Case :
3-WDSON
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