Infineon Technologies - IPB073N15N5ATMA1

KEY Part #: K6417658

IPB073N15N5ATMA1 Pricing (USD) [37874pcs Stock]

  • 1 pcs$1.05496
  • 1,000 pcs$1.04971

Part Number:
IPB073N15N5ATMA1
Manufacturer:
Infineon Technologies
Detailed description:
MV POWER MOS.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - Arrays, Diodes - Rectifiers - Arrays, Thyristors - DIACs, SIDACs, Power Driver Modules, Thyristors - TRIACs and Diodes - RF ...
Competitive Advantage:
We specialize in Infineon Technologies IPB073N15N5ATMA1 electronic components. IPB073N15N5ATMA1 can be shipped within 24 hours after order. If you have any demands for IPB073N15N5ATMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPB073N15N5ATMA1 Product Attributes

Part Number : IPB073N15N5ATMA1
Manufacturer : Infineon Technologies
Description : MV POWER MOS
Series : OptiMOS™-5
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 150V
Current - Continuous Drain (Id) @ 25°C : 114A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 8V, 10V
Rds On (Max) @ Id, Vgs : 7.3 mOhm @ 57A, 10V
Vgs(th) (Max) @ Id : 4.6V @ 160µA
Gate Charge (Qg) (Max) @ Vgs : 61nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 4700pF @ 75V
FET Feature : -
Power Dissipation (Max) : 214W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : PG-TO263-3-2
Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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