Vishay Siliconix - SIHF6N40D-E3

KEY Part #: K6393047

SIHF6N40D-E3 Pricing (USD) [59189pcs Stock]

  • 1 pcs$0.66060
  • 1,000 pcs$0.26168

Part Number:
SIHF6N40D-E3
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET N-CH 400V 6A TO-220 FPAK.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Single, Transistors - Programmable Unijunction, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Rectifiers - Arrays, Power Driver Modules, Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - RF and Transistors - Special Purpose ...
Competitive Advantage:
We specialize in Vishay Siliconix SIHF6N40D-E3 electronic components. SIHF6N40D-E3 can be shipped within 24 hours after order. If you have any demands for SIHF6N40D-E3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIHF6N40D-E3 Product Attributes

Part Number : SIHF6N40D-E3
Manufacturer : Vishay Siliconix
Description : MOSFET N-CH 400V 6A TO-220 FPAK
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 400V
Current - Continuous Drain (Id) @ 25°C : 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 1 Ohm @ 3A, 10V
Vgs(th) (Max) @ Id : 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 18nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 311pF @ 100V
FET Feature : -
Power Dissipation (Max) : 30W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220 Full Pack
Package / Case : TO-220-3 Full Pack

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