Vishay Siliconix - SIHG33N60E-E3

KEY Part #: K6416968

SIHG33N60E-E3 Pricing (USD) [21609pcs Stock]

  • 1 pcs$1.90718

Part Number:
SIHG33N60E-E3
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET N-CH 600V 33A TO247AC.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - Arrays, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - RF, Diodes - Zener - Single, Power Driver Modules, Transistors - Bipolar (BJT) - Single, Pre-Biased and Thyristors - SCRs ...
Competitive Advantage:
We specialize in Vishay Siliconix SIHG33N60E-E3 electronic components. SIHG33N60E-E3 can be shipped within 24 hours after order. If you have any demands for SIHG33N60E-E3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIHG33N60E-E3 Product Attributes

Part Number : SIHG33N60E-E3
Manufacturer : Vishay Siliconix
Description : MOSFET N-CH 600V 33A TO247AC
Series : E
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 99 mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 150nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 3508pF @ 100V
FET Feature : -
Power Dissipation (Max) : 278W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-247AC
Package / Case : TO-247-3