DMP58D0LFB-7 Pricing (USD) [893743pcs Stock]
- 1 pcs$0.04139
- 3,000 pcs$0.03759
- Part Number:
- DMP58D0LFB-7
- Manufacturer:
- Diodes Incorporated
- Detailed description:
- MOSFET P-CH 50V 0.18A DFN1006-3.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Bridge Rectifiers, Transistors - FETs, MOSFETs - Arrays, Thyristors - SCRs - Modules, Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - RF, Transistors - Special Purpose and Transistors - Programmable Unijunction ...
- Competitive Advantage:
- We specialize in Diodes Incorporated DMP58D0LFB-7 electronic components. DMP58D0LFB-7 can be shipped within 24 hours after order. If you have any demands for DMP58D0LFB-7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMP58D0LFB-7 Product Attributes
Part Number :
DMP58D0LFB-7
Manufacturer :
Diodes Incorporated
Description :
MOSFET P-CH 50V 0.18A DFN1006-3
Series :
-
Part Status :
Active
FET Type :
P-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
50V
Current - Continuous Drain (Id) @ 25°C :
180mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
2.5V, 5V
Rds On (Max) @ Id, Vgs :
8 Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id :
2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
-
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
27pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
470mW (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
3-DFN1006 (1.0x0.6)
Package / Case :
3-UFDFN
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