IXYS - IXFN66N85X

KEY Part #: K6398039

IXFN66N85X Pricing (USD) [2849pcs Stock]

  • 1 pcs$16.71586
  • 10 pcs$15.46217
  • 100 pcs$13.20553

Part Number:
IXFN66N85X
Manufacturer:
IXYS
Detailed description:
850V/65A ULTRA JUNCTION X-CLASS.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Rectifiers - Arrays, Power Driver Modules, Transistors - Bipolar (BJT) - Single, Thyristors - SCRs, Transistors - Bipolar (BJT) - Arrays and Transistors - Programmable Unijunction ...
Competitive Advantage:
We specialize in IXYS IXFN66N85X electronic components. IXFN66N85X can be shipped within 24 hours after order. If you have any demands for IXFN66N85X, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFN66N85X Product Attributes

Part Number : IXFN66N85X
Manufacturer : IXYS
Description : 850V/65A ULTRA JUNCTION X-CLASS
Series : HiPerFET™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 850V
Current - Continuous Drain (Id) @ 25°C : 65A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 65 mOhm @ 33A, 10V
Vgs(th) (Max) @ Id : 5.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs : 230nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 8900pF @ 25V
FET Feature : -
Power Dissipation (Max) : 830W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Chassis Mount
Supplier Device Package : SOT-227B
Package / Case : SOT-227-4, miniBLOC

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