IXTH200N10T Pricing (USD) [14773pcs Stock]
- 1 pcs$3.06727
- 10 pcs$2.75966
- 100 pcs$2.26899
- 500 pcs$1.90103
- 1,000 pcs$1.65573
- Part Number:
- IXTH200N10T
- Manufacturer:
- IXYS
- Detailed description:
- MOSFET N-CH 100V 200A TO-247.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - RF, Diodes - Bridge Rectifiers, Diodes - Zener - Arrays, Diodes - RF, Transistors - FETs, MOSFETs - Single, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - TRIACs and Transistors - Bipolar (BJT) - Single, Pre-Biased ...
- Competitive Advantage:
- We specialize in IXYS IXTH200N10T electronic components. IXTH200N10T can be shipped within 24 hours after order. If you have any demands for IXTH200N10T, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTH200N10T Product Attributes
Part Number :
IXTH200N10T
Manufacturer :
IXYS
Description :
MOSFET N-CH 100V 200A TO-247
Series :
TrenchMV™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
100V
Current - Continuous Drain (Id) @ 25°C :
200A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
5.5 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id :
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
152nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
9400pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
550W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-247 (IXTH)
Package / Case :
TO-247-3
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