Vishay Semiconductor Diodes Division - 1N5407GP-E3/54

KEY Part #: K6440322

1N5407GP-E3/54 Pricing (USD) [283149pcs Stock]

  • 1 pcs$0.13063
  • 2,800 pcs$0.11839

Part Number:
1N5407GP-E3/54
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE GEN PURP 800V 3A DO201AD. Rectifiers 3A,800V, STD SUPERECT
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - Modules, Transistors - IGBTs - Arrays, Thyristors - DIACs, SIDACs, Transistors - Programmable Unijunction, Diodes - Rectifiers - Arrays, Thyristors - SCRs - Modules and Diodes - Variable Capacitance (Varicaps, Varactors) ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division 1N5407GP-E3/54 electronic components. 1N5407GP-E3/54 can be shipped within 24 hours after order. If you have any demands for 1N5407GP-E3/54, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1N5407GP-E3/54 Product Attributes

Part Number : 1N5407GP-E3/54
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 800V 3A DO201AD
Series : -
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 800V
Current - Average Rectified (Io) : 3A
Voltage - Forward (Vf) (Max) @ If : 1.2V @ 3A
Speed : Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) : -
Current - Reverse Leakage @ Vr : 5µA @ 400V
Capacitance @ Vr, F : 30pF @ 4V, 1MHz
Mounting Type : Through Hole
Package / Case : DO-201AD, Axial
Supplier Device Package : DO-201AD
Operating Temperature - Junction : -50°C ~ 150°C

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