Infineon Technologies - IPI90N06S4L04AKSA2

KEY Part #: K6418189

IPI90N06S4L04AKSA2 Pricing (USD) [55006pcs Stock]

  • 1 pcs$0.71084
  • 500 pcs$0.59703

Part Number:
IPI90N06S4L04AKSA2
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET N-CH 60V 80A TO262-3.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - JFETs, Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Modules, Diodes - RF, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - FETs, MOSFETs - Arrays and Diodes - Rectifiers - Single ...
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPI90N06S4L04AKSA2 Product Attributes

Part Number : IPI90N06S4L04AKSA2
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 60V 80A TO262-3
Series : OptiMOS™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 3.7 mOhm @ 90A, 10V
Vgs(th) (Max) @ Id : 2.2V @ 90µA
Gate Charge (Qg) (Max) @ Vgs : 170nC @ 10V
Vgs (Max) : ±16V
Input Capacitance (Ciss) (Max) @ Vds : 13000pF @ 25V
FET Feature : -
Power Dissipation (Max) : 150W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : PG-TO262-3-1
Package / Case : TO-262-3 Long Leads, I²Pak, TO-262AA