SSM6J505NU,LF Pricing (USD) [548511pcs Stock]
- 1 pcs$0.09510
- 3,000 pcs$0.09462
- Part Number:
- SSM6J505NU,LF
- Manufacturer:
- Toshiba Semiconductor and Storage
- Detailed description:
- MOSFET P CH 12V 12A UDFN6B.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Power Driver Modules, Diodes - Variable Capacitance (Varicaps, Varactors), Thyristors - SCRs, Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - Modules, Transistors - IGBTs - Single and Transistors - Special Purpose ...
- Competitive Advantage:
- We specialize in Toshiba Semiconductor and Storage SSM6J505NU,LF electronic components. SSM6J505NU,LF can be shipped within 24 hours after order. If you have any demands for SSM6J505NU,LF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SSM6J505NU,LF Product Attributes
Part Number :
SSM6J505NU,LF
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET P CH 12V 12A UDFN6B
Series :
U-MOSVI
Part Status :
Active
FET Type :
P-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
12V
Current - Continuous Drain (Id) @ 25°C :
12A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
1.2V, 4.5V
Rds On (Max) @ Id, Vgs :
12 mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id :
1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
37.6nC @ 4.5V
Vgs (Max) :
±6V
Input Capacitance (Ciss) (Max) @ Vds :
2700pF @ 10V
FET Feature :
-
Power Dissipation (Max) :
1.25W (Ta)
Operating Temperature :
150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
6-UDFNB (2x2)
Package / Case :
6-WDFN Exposed Pad
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