IRFD110PBF Pricing (USD) [100560pcs Stock]
- 1 pcs$0.33222
- 10 pcs$0.29069
- 100 pcs$0.22437
- 500 pcs$0.16619
- 1,000 pcs$0.13295
- Part Number:
- IRFD110PBF
- Manufacturer:
- Vishay Siliconix
- Detailed description:
- MOSFET N-CH 100V 1A 4-DIP.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - Single, Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Rectifiers - Arrays, Transistors - IGBTs - Single, Diodes - Zener - Single and Transistors - Bipolar (BJT) - Single, Pre-Biased ...
- Competitive Advantage:
- We specialize in Vishay Siliconix IRFD110PBF electronic components. IRFD110PBF can be shipped within 24 hours after order. If you have any demands for IRFD110PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFD110PBF Product Attributes
Part Number :
IRFD110PBF
Manufacturer :
Vishay Siliconix
Description :
MOSFET N-CH 100V 1A 4-DIP
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
100V
Current - Continuous Drain (Id) @ 25°C :
1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
540 mOhm @ 600mA, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
8.3nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
180pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
1.3W (Ta)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
4-DIP, Hexdip, HVMDIP
Package / Case :
4-DIP (0.300", 7.62mm)
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