ON Semiconductor - NTLGF3501NT2G

KEY Part #: K6420504

NTLGF3501NT2G Pricing (USD) [202426pcs Stock]

  • 1 pcs$0.18363
  • 3,000 pcs$0.18272

Part Number:
NTLGF3501NT2G
Manufacturer:
ON Semiconductor
Detailed description:
MOSFET N-CH 20V 2.8A 6-DFN.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Modules, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Bipolar (BJT) - Arrays, Power Driver Modules, Transistors - Bipolar (BJT) - RF, Diodes - RF, Thyristors - SCRs and Thyristors - DIACs, SIDACs ...
Competitive Advantage:
We specialize in ON Semiconductor NTLGF3501NT2G electronic components. NTLGF3501NT2G can be shipped within 24 hours after order. If you have any demands for NTLGF3501NT2G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NTLGF3501NT2G Product Attributes

Part Number : NTLGF3501NT2G
Manufacturer : ON Semiconductor
Description : MOSFET N-CH 20V 2.8A 6-DFN
Series : FETKY™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 2.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 4.5V
Rds On (Max) @ Id, Vgs : 90 mOhm @ 3.4A, 4.5V
Vgs(th) (Max) @ Id : 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 10nC @ 4.5V
Vgs (Max) : ±12V
Input Capacitance (Ciss) (Max) @ Vds : 275pF @ 10V
FET Feature : -
Power Dissipation (Max) : 1.14W (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 6-DFN (3x3)
Package / Case : 6-VDFN Exposed Pad

You May Also Be Interested In