Diodes Incorporated - DMN65D8LFB-7

KEY Part #: K6405301

DMN65D8LFB-7 Pricing (USD) [1457627pcs Stock]

  • 1 pcs$0.02538
  • 3,000 pcs$0.02352

Part Number:
DMN65D8LFB-7
Manufacturer:
Diodes Incorporated
Detailed description:
MOSFET N-CH 60V 260MA 3DFN.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Single, Thyristors - TRIACs, Diodes - Zener - Single, Transistors - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Bipolar (BJT) - RF, Transistors - JFETs and Transistors - Bipolar (BJT) - Arrays, Pre-Biased ...
Competitive Advantage:
We specialize in Diodes Incorporated DMN65D8LFB-7 electronic components. DMN65D8LFB-7 can be shipped within 24 hours after order. If you have any demands for DMN65D8LFB-7, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMN65D8LFB-7 Product Attributes

Part Number : DMN65D8LFB-7
Manufacturer : Diodes Incorporated
Description : MOSFET N-CH 60V 260MA 3DFN
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 260mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
Rds On (Max) @ Id, Vgs : 3 Ohm @ 115mA, 10V
Vgs(th) (Max) @ Id : 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 25pF @ 25V
FET Feature : -
Power Dissipation (Max) : 430mW (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : X1-DFN1006-3
Package / Case : 3-UFDFN

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