SIHP33N60E-GE3 Pricing (USD) [13792pcs Stock]
- 1 pcs$2.98795
- 10 pcs$2.66623
- 100 pcs$2.18631
- 500 pcs$1.77038
- 1,000 pcs$1.49309
- Part Number:
- SIHP33N60E-GE3
- Manufacturer:
- Vishay Siliconix
- Detailed description:
- MOSFET N-CH 600V 33A TO-220AB.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - DIACs, SIDACs, Diodes - RF, Thyristors - TRIACs, Transistors - Bipolar (BJT) - Single, Pre-Biased, Power Driver Modules, Transistors - Programmable Unijunction, Diodes - Variable Capacitance (Varicaps, Varactors) and Transistors - IGBTs - Single ...
- Competitive Advantage:
- We specialize in Vishay Siliconix SIHP33N60E-GE3 electronic components. SIHP33N60E-GE3 can be shipped within 24 hours after order. If you have any demands for SIHP33N60E-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIHP33N60E-GE3 Product Attributes
Part Number :
SIHP33N60E-GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET N-CH 600V 33A TO-220AB
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
33A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
99 mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
150nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
3508pF @ 100V
FET Feature :
-
Power Dissipation (Max) :
278W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220AB
Package / Case :
TO-220-3
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