IAUT300N10S5N015ATMA1 Pricing (USD) [21947pcs Stock]
- 1 pcs$1.87788
- Part Number:
- IAUT300N10S5N015ATMA1
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET75V120V.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - RF, Diodes - RF, Diodes - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - JFETs, Transistors - Bipolar (BJT) - Single, Thyristors - SCRs and Thyristors - SCRs - Modules ...
- Competitive Advantage:
- We specialize in Infineon Technologies IAUT300N10S5N015ATMA1 electronic components. IAUT300N10S5N015ATMA1 can be shipped within 24 hours after order. If you have any demands for IAUT300N10S5N015ATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IAUT300N10S5N015ATMA1 Product Attributes
Part Number :
IAUT300N10S5N015ATMA1
Manufacturer :
Infineon Technologies
Description :
MOSFET75V120V
Series :
OptiMOS™-5
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
100V
Current - Continuous Drain (Id) @ 25°C :
300A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, Vgs :
1.5 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id :
3.8V @ 275µA
Gate Charge (Qg) (Max) @ Vgs :
216nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
16011pF @ 50V
FET Feature :
-
Power Dissipation (Max) :
375W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
PG-HSOF-8-1
Package / Case :
8-PowerSFN
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