STW19NM60N Pricing (USD) [30568pcs Stock]
- 1 pcs$1.86857
- 10 pcs$1.66629
- 100 pcs$1.36643
- 500 pcs$1.04975
- 1,000 pcs$0.88533
- Part Number:
- STW19NM60N
- Manufacturer:
- STMicroelectronics
- Detailed description:
- MOSFET N-CH 600V 13A TO-247.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Bridge Rectifiers, Diodes - Rectifiers - Single, Diodes - Zener - Single, Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - TRIACs, Transistors - Bipolar (BJT) - Single and Diodes - RF ...
- Competitive Advantage:
- We specialize in STMicroelectronics STW19NM60N electronic components. STW19NM60N can be shipped within 24 hours after order. If you have any demands for STW19NM60N, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STW19NM60N Product Attributes
Part Number :
STW19NM60N
Manufacturer :
STMicroelectronics
Description :
MOSFET N-CH 600V 13A TO-247
Series :
Automotive, AEC-Q101, MDmesh™ II
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
285 mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
35nC @ 10V
Vgs (Max) :
±25V
Input Capacitance (Ciss) (Max) @ Vds :
1000pF @ 50V
FET Feature :
-
Power Dissipation (Max) :
110W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-247
Package / Case :
TO-247-3
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