FCP11N60F Pricing (USD) [24872pcs Stock]
- 1 pcs$1.62618
- 10 pcs$1.45255
- 100 pcs$1.19104
- 500 pcs$0.91500
- 1,000 pcs$0.77168
- Part Number:
- FCP11N60F
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET N-CH 600V 11A TO-220.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Programmable Unijunction, Thyristors - TRIACs, Diodes - Zener - Arrays, Diodes - Zener - Single and Transistors - JFETs ...
- Competitive Advantage:
- We specialize in ON Semiconductor FCP11N60F electronic components. FCP11N60F can be shipped within 24 hours after order. If you have any demands for FCP11N60F, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FCP11N60F Product Attributes
Part Number :
FCP11N60F
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 600V 11A TO-220
Series :
SuperFET™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
380 mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id :
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
52nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
1490pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
125W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220-3
Package / Case :
TO-220-3
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