NVTFS6H888NTAG Pricing (USD) [138141pcs Stock]
- 1 pcs$0.26775
- Part Number:
- NVTFS6H888NTAG
- Manufacturer:
- ON Semiconductor
- Detailed description:
- T8 80V U8FL.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Arrays, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - IGBTs - Single, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - SCRs, Diodes - Bridge Rectifiers, Transistors - Bipolar (BJT) - Arrays and Transistors - Bipolar (BJT) - Single ...
- Competitive Advantage:
- We specialize in ON Semiconductor NVTFS6H888NTAG electronic components. NVTFS6H888NTAG can be shipped within 24 hours after order. If you have any demands for NVTFS6H888NTAG, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NVTFS6H888NTAG Product Attributes
Part Number :
NVTFS6H888NTAG
Manufacturer :
ON Semiconductor
Description :
T8 80V U8FL
Series :
Automotive, AEC-Q101
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
80V
Current - Continuous Drain (Id) @ 25°C :
4.7A (Ta), 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
55 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id :
4V @ 15µA
Gate Charge (Qg) (Max) @ Vgs :
4.7nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
220pF @ 40V
FET Feature :
-
Power Dissipation (Max) :
2.9W (Ta), 18W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
8-WDFN (3.3x3.3)
Package / Case :
8-PowerWDFN
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