SSM3J120TU,LF Pricing (USD) [666819pcs Stock]
- 1 pcs$0.06132
- 3,000 pcs$0.06102
- Part Number:
- SSM3J120TU,LF
- Manufacturer:
- Toshiba Semiconductor and Storage
- Detailed description:
- MOSFET P-CH 20V 4A UFM.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Programmable Unijunction, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - SCRs, Transistors - IGBTs - Modules, Thyristors - TRIACs, Transistors - Bipolar (BJT) - Single and Diodes - Zener - Arrays ...
- Competitive Advantage:
- We specialize in Toshiba Semiconductor and Storage SSM3J120TU,LF electronic components. SSM3J120TU,LF can be shipped within 24 hours after order. If you have any demands for SSM3J120TU,LF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SSM3J120TU,LF Product Attributes
Part Number :
SSM3J120TU,LF
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET P-CH 20V 4A UFM
Series :
U-MOSIV
Part Status :
Active
FET Type :
P-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
20V
Current - Continuous Drain (Id) @ 25°C :
4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
1.5V, 4V
Rds On (Max) @ Id, Vgs :
38 mOhm @ 3A, 4V
Vgs(th) (Max) @ Id :
1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
22.3nC @ 4V
Vgs (Max) :
±8V
Input Capacitance (Ciss) (Max) @ Vds :
1484pF @ 10V
FET Feature :
-
Power Dissipation (Max) :
500mW (Ta)
Operating Temperature :
150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
UFM
Package / Case :
3-SMD, Flat Leads
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