IPI80N08S207AKSA1 Pricing (USD) [78713pcs Stock]
- 1 pcs$0.49675
- 500 pcs$0.47300
- Part Number:
- IPI80N08S207AKSA1
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 75V 80A TO262-3.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Power Driver Modules, Transistors - Bipolar (BJT) - RF, Thyristors - TRIACs, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - IGBTs - Single, Diodes - Rectifiers - Single, Diodes - Rectifiers - Arrays and Transistors - FETs, MOSFETs - RF ...
- Competitive Advantage:
- We specialize in Infineon Technologies IPI80N08S207AKSA1 electronic components. IPI80N08S207AKSA1 can be shipped within 24 hours after order. If you have any demands for IPI80N08S207AKSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPI80N08S207AKSA1 Product Attributes
Part Number :
IPI80N08S207AKSA1
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 75V 80A TO262-3
Series :
OptiMOS™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
75V
Current - Continuous Drain (Id) @ 25°C :
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
7.4 mOhm @ 80A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
180nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
4700pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
300W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
PG-TO262-3-1
Package / Case :
TO-262-3 Long Leads, I²Pak, TO-262AA
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