[1016pcs Stock]
- Part Number:
- BSS139L6327HTSA1
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 250V 100MA SOT-23.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Modules, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Arrays, Diodes - Rectifiers - Single, Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - RF, Transistors - FETs, MOSFETs - RF and Diodes - Rectifiers - Arrays ...
- Competitive Advantage:
- We specialize in Infineon Technologies BSS139L6327HTSA1 electronic components. BSS139L6327HTSA1 can be shipped within 24 hours after order. If you have any demands for BSS139L6327HTSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSS139L6327HTSA1 Product Attributes
Part Number :
BSS139L6327HTSA1
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 250V 100MA SOT-23
Series :
SIPMOS®
Part Status :
Obsolete
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
250V
Current - Continuous Drain (Id) @ 25°C :
100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
0V, 10V
Rds On (Max) @ Id, Vgs :
14 Ohm @ 0.1mA, 10V
Vgs(th) (Max) @ Id :
1V @ 56µA
Gate Charge (Qg) (Max) @ Vgs :
3.5nC @ 5V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
76pF @ 25V
FET Feature :
Depletion Mode
Power Dissipation (Max) :
360mW (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
SOT-23-3
Package / Case :
TO-236-3, SC-59, SOT-23-3
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