Vishay Siliconix - SIS427EDN-T1-GE3

KEY Part #: K6416238

SIS427EDN-T1-GE3 Pricing (USD) [306526pcs Stock]

  • 1 pcs$0.12067
  • 3,000 pcs$0.11355

Part Number:
SIS427EDN-T1-GE3
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET P-CH 30V 50A 1212-8.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Power Driver Modules, Diodes - RF, Thyristors - DIACs, SIDACs, Thyristors - TRIACs, Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - Single, Diodes - Variable Capacitance (Varicaps, Varactors) and Transistors - Bipolar (BJT) - RF ...
Competitive Advantage:
We specialize in Vishay Siliconix SIS427EDN-T1-GE3 electronic components. SIS427EDN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIS427EDN-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIS427EDN-T1-GE3 Product Attributes

Part Number : SIS427EDN-T1-GE3
Manufacturer : Vishay Siliconix
Description : MOSFET P-CH 30V 50A 1212-8
Series : TrenchFET®
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 10.6 mOhm @ 11A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 66nC @ 10V
Vgs (Max) : ±25V
Input Capacitance (Ciss) (Max) @ Vds : 1930pF @ 15V
FET Feature : -
Power Dissipation (Max) : 3.7W (Ta), 52W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : PowerPAK® 1212-8
Package / Case : PowerPAK® 1212-8