STD8N60DM2 Pricing (USD) [131849pcs Stock]
- 1 pcs$0.28053
- 2,500 pcs$0.24972
- Part Number:
- STD8N60DM2
- Manufacturer:
- STMicroelectronics
- Detailed description:
- N-CHANNEL 600 V 0.26 OHM TYP..
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Single, Power Driver Modules, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Zener - Single, Transistors - Bipolar (BJT) - Single, Transistors - IGBTs - Modules, Transistors - Special Purpose and Thyristors - SCRs ...
- Competitive Advantage:
- We specialize in STMicroelectronics STD8N60DM2 electronic components. STD8N60DM2 can be shipped within 24 hours after order. If you have any demands for STD8N60DM2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STD8N60DM2 Product Attributes
Part Number :
STD8N60DM2
Manufacturer :
STMicroelectronics
Description :
N-CHANNEL 600 V 0.26 OHM TYP.
Series :
MDmesh™ DM2
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
600 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id :
5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs :
13.5nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
375pF @ 100V
FET Feature :
-
Power Dissipation (Max) :
85W (Tc)
Operating Temperature :
150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
DPAK
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
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