SISS72DN-T1-GE3 Pricing (USD) [115015pcs Stock]
- 1 pcs$0.32159
- Part Number:
- SISS72DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Detailed description:
- MOSFET N-CH 150V.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Single, Thyristors - SCRs - Modules, Diodes - Bridge Rectifiers, Power Driver Modules, Transistors - IGBTs - Arrays, Thyristors - TRIACs, Transistors - Bipolar (BJT) - Arrays, Pre-Biased and Thyristors - DIACs, SIDACs ...
- Competitive Advantage:
- We specialize in Vishay Siliconix SISS72DN-T1-GE3 electronic components. SISS72DN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SISS72DN-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SISS72DN-T1-GE3 Product Attributes
Part Number :
SISS72DN-T1-GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET N-CH 150V
Series :
TrenchFET®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
150V
Current - Continuous Drain (Id) @ 25°C :
7A (Ta), 25.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
42 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
22nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
550pF @ 75V
FET Feature :
-
Power Dissipation (Max) :
5.1W (Ta), 65.8W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
PowerPAK® 1212-8S
Package / Case :
PowerPAK® 1212-8S
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