SSM3J130TU,LF Pricing (USD) [603363pcs Stock]
- 1 pcs$0.06777
- 3,000 pcs$0.06743
- Part Number:
- SSM3J130TU,LF
- Manufacturer:
- Toshiba Semiconductor and Storage
- Detailed description:
- MOSFET P-CH 20V 4.4A UFM.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Variable Capacitance (Varicaps, Varactors), Diodes - Rectifiers - Single, Transistors - Special Purpose, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - IGBTs - Arrays, Diodes - Bridge Rectifiers and Diodes - RF ...
- Competitive Advantage:
- We specialize in Toshiba Semiconductor and Storage SSM3J130TU,LF electronic components. SSM3J130TU,LF can be shipped within 24 hours after order. If you have any demands for SSM3J130TU,LF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SSM3J130TU,LF Product Attributes
Part Number :
SSM3J130TU,LF
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET P-CH 20V 4.4A UFM
Series :
U-MOSVI
Part Status :
Active
FET Type :
P-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
20V
Current - Continuous Drain (Id) @ 25°C :
4.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
1.5V, 4.5V
Rds On (Max) @ Id, Vgs :
25.8 mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id :
1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
24.8nC @ 4.5V
Vgs (Max) :
±8V
Input Capacitance (Ciss) (Max) @ Vds :
1800pF @ 10V
FET Feature :
-
Power Dissipation (Max) :
500mW (Ta)
Operating Temperature :
150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
UFM
Package / Case :
3-SMD, Flat Leads
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