Toshiba Semiconductor and Storage - SSM3J130TU,LF

KEY Part #: K6416918

SSM3J130TU,LF Pricing (USD) [603363pcs Stock]

  • 1 pcs$0.06777
  • 3,000 pcs$0.06743

Part Number:
SSM3J130TU,LF
Manufacturer:
Toshiba Semiconductor and Storage
Detailed description:
MOSFET P-CH 20V 4.4A UFM.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs, Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - IGBTs - Modules, Diodes - RF, Transistors - Bipolar (BJT) - RF, Transistors - Programmable Unijunction and Transistors - Special Purpose ...
Competitive Advantage:
We specialize in Toshiba Semiconductor and Storage SSM3J130TU,LF electronic components. SSM3J130TU,LF can be shipped within 24 hours after order. If you have any demands for SSM3J130TU,LF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SSM3J130TU,LF Product Attributes

Part Number : SSM3J130TU,LF
Manufacturer : Toshiba Semiconductor and Storage
Description : MOSFET P-CH 20V 4.4A UFM
Series : U-MOSVI
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 4.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 1.5V, 4.5V
Rds On (Max) @ Id, Vgs : 25.8 mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id : 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 24.8nC @ 4.5V
Vgs (Max) : ±8V
Input Capacitance (Ciss) (Max) @ Vds : 1800pF @ 10V
FET Feature : -
Power Dissipation (Max) : 500mW (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : UFM
Package / Case : 3-SMD, Flat Leads

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