[13342pcs Stock]
- Part Number:
- NP33N06YDG-E1-AY
- Manufacturer:
- Renesas Electronics America
- Detailed description:
- MOSFET N-CH 60V 33A 8HSON.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - IGBTs - Modules, Thyristors - DIACs, SIDACs, Transistors - IGBTs - Single, Diodes - Rectifiers - Arrays and Transistors - FETs, MOSFETs - Arrays ...
- Competitive Advantage:
- We specialize in Renesas Electronics America NP33N06YDG-E1-AY electronic components. NP33N06YDG-E1-AY can be shipped within 24 hours after order. If you have any demands for NP33N06YDG-E1-AY, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NP33N06YDG-E1-AY Product Attributes
Part Number :
NP33N06YDG-E1-AY
Manufacturer :
Renesas Electronics America
Description :
MOSFET N-CH 60V 33A 8HSON
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
60V
Current - Continuous Drain (Id) @ 25°C :
33A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
5V, 10V
Rds On (Max) @ Id, Vgs :
14 mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id :
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
78nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
3900pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
1W (Ta), 97W (Tc)
Operating Temperature :
175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
8-HSON
Package / Case :
8-SMD, Flat Lead Exposed Pad
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