IXYS - IXFK26N100P

KEY Part #: K6395314

IXFK26N100P Pricing (USD) [4464pcs Stock]

  • 1 pcs$11.21465
  • 25 pcs$11.15886

Part Number:
IXFK26N100P
Manufacturer:
IXYS
Detailed description:
MOSFET N-CH 1000V 26A TO-264.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - RF, Diodes - Rectifiers - Arrays, Diodes - Zener - Arrays, Transistors - JFETs, Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - Single, Transistors - Bipolar (BJT) - Single and Power Driver Modules ...
Competitive Advantage:
We specialize in IXYS IXFK26N100P electronic components. IXFK26N100P can be shipped within 24 hours after order. If you have any demands for IXFK26N100P, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFK26N100P Product Attributes

Part Number : IXFK26N100P
Manufacturer : IXYS
Description : MOSFET N-CH 1000V 26A TO-264
Series : HiPerFET™, PolarP2™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 1000V
Current - Continuous Drain (Id) @ 25°C : 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 390 mOhm @ 13A, 10V
Vgs(th) (Max) @ Id : 6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 197nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 11900pF @ 25V
FET Feature : -
Power Dissipation (Max) : 780W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-264AA (IXFK)
Package / Case : TO-264-3, TO-264AA