IXTH1N200P3 Pricing (USD) [14773pcs Stock]
- 1 pcs$10.98948
- 10 pcs$9.98875
- 100 pcs$8.49044
- Part Number:
- IXTH1N200P3
- Manufacturer:
- IXYS
- Detailed description:
- MOSFET N-CH 2000V 1A TO-247.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Bridge Rectifiers, Transistors - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Rectifiers - Single, Diodes - Variable Capacitance (Varicaps, Varactors), Diodes - Zener - Single, Transistors - Special Purpose and Transistors - JFETs ...
- Competitive Advantage:
- We specialize in IXYS IXTH1N200P3 electronic components. IXTH1N200P3 can be shipped within 24 hours after order. If you have any demands for IXTH1N200P3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTH1N200P3 Product Attributes
Part Number :
IXTH1N200P3
Manufacturer :
IXYS
Description :
MOSFET N-CH 2000V 1A TO-247
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
2000V
Current - Continuous Drain (Id) @ 25°C :
1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
40 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
23.5nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
646pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
125W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-247 (IXTH)
Package / Case :
TO-247-3
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