IXTP10N60P Pricing (USD) [38966pcs Stock]
- 1 pcs$1.22241
- 50 pcs$1.21633
- Part Number:
- IXTP10N60P
- Manufacturer:
- IXYS
- Detailed description:
- MOSFET N-CH 600V 10A TO-220.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Bridge Rectifiers, Transistors - FETs, MOSFETs - RF, Diodes - Zener - Arrays, Thyristors - SCRs - Modules, Transistors - FETs, MOSFETs - Single, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Bipolar (BJT) - Single, Pre-Biased and Transistors - IGBTs - Modules ...
- Competitive Advantage:
- We specialize in IXYS IXTP10N60P electronic components. IXTP10N60P can be shipped within 24 hours after order. If you have any demands for IXTP10N60P, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTP10N60P Product Attributes
Part Number :
IXTP10N60P
Manufacturer :
IXYS
Description :
MOSFET N-CH 600V 10A TO-220
Series :
Polar™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
740 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id :
5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
32nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
1610pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
200W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220AB
Package / Case :
TO-220-3
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