[8420pcs Stock]
- Part Number:
- SPD08N50C3BTMA1
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 560V 7.6A DPAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - JFETs, Transistors - Bipolar (BJT) - Arrays, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Bipolar (BJT) - Single, Transistors - Special Purpose, Diodes - Bridge Rectifiers, Diodes - Zener - Arrays and Transistors - IGBTs - Single ...
- Competitive Advantage:
- We specialize in Infineon Technologies SPD08N50C3BTMA1 electronic components. SPD08N50C3BTMA1 can be shipped within 24 hours after order. If you have any demands for SPD08N50C3BTMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SPD08N50C3BTMA1 Product Attributes
Part Number :
SPD08N50C3BTMA1
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 560V 7.6A DPAK
Series :
CoolMOS™
Part Status :
Obsolete
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
560V
Current - Continuous Drain (Id) @ 25°C :
7.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
600 mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id :
3.9V @ 350µA
Gate Charge (Qg) (Max) @ Vgs :
32nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
750pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
83W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
PG-TO252-3
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
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