IRFBE30LPBF Pricing (USD) [28953pcs Stock]
- 1 pcs$1.38380
- 10 pcs$1.24894
- 100 pcs$0.95201
- 500 pcs$0.74046
- 1,000 pcs$0.61352
- Part Number:
- IRFBE30LPBF
- Manufacturer:
- Vishay Siliconix
- Detailed description:
- MOSFET N-CH 800V 4.1A TO-262.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - TRIACs, Transistors - JFETs, Power Driver Modules, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Bipolar (BJT) - Single, Diodes - Zener - Single and Thyristors - SCRs ...
- Competitive Advantage:
- We specialize in Vishay Siliconix IRFBE30LPBF electronic components. IRFBE30LPBF can be shipped within 24 hours after order. If you have any demands for IRFBE30LPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFBE30LPBF Product Attributes
Part Number :
IRFBE30LPBF
Manufacturer :
Vishay Siliconix
Description :
MOSFET N-CH 800V 4.1A TO-262
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
800V
Current - Continuous Drain (Id) @ 25°C :
4.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
3 Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
78nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1300pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
125W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
I2PAK
Package / Case :
TO-262-3 Long Leads, I²Pak, TO-262AA
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