TPN22006NH,LQ Pricing (USD) [293170pcs Stock]
- 1 pcs$0.13947
- 3,000 pcs$0.13878
- Part Number:
- TPN22006NH,LQ
- Manufacturer:
- Toshiba Semiconductor and Storage
- Detailed description:
- MOSFET N CH 60V 9A 8-TSON.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Bridge Rectifiers, Transistors - Bipolar (BJT) - RF, Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Modules, Thyristors - SCRs, Diodes - Zener - Single, Transistors - JFETs and Diodes - Zener - Arrays ...
- Competitive Advantage:
- We specialize in Toshiba Semiconductor and Storage TPN22006NH,LQ electronic components. TPN22006NH,LQ can be shipped within 24 hours after order. If you have any demands for TPN22006NH,LQ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TPN22006NH,LQ Product Attributes
Part Number :
TPN22006NH,LQ
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET N CH 60V 9A 8-TSON
Series :
U-MOSVIII-H
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
60V
Current - Continuous Drain (Id) @ 25°C :
9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
6.5V, 10V
Rds On (Max) @ Id, Vgs :
22 mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id :
4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs :
12nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
710pF @ 30V
FET Feature :
-
Power Dissipation (Max) :
700mW (Ta), 18W (Tc)
Operating Temperature :
150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
8-TSON Advance (3.3x3.3)
Package / Case :
8-PowerVDFN
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