[12253pcs Stock]
- Part Number:
- STW11NB80
- Manufacturer:
- STMicroelectronics
- Detailed description:
- MOSFET N-CH 800V 11A TO-247.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Variable Capacitance (Varicaps, Varactors), Power Driver Modules, Thyristors - SCRs, Transistors - IGBTs - Single, Thyristors - SCRs - Modules and Diodes - Zener - Arrays ...
- Competitive Advantage:
- We specialize in STMicroelectronics STW11NB80 electronic components. STW11NB80 can be shipped within 24 hours after order. If you have any demands for STW11NB80, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STW11NB80 Product Attributes
Part Number :
STW11NB80
Manufacturer :
STMicroelectronics
Description :
MOSFET N-CH 800V 11A TO-247
Series :
PowerMESH™
Part Status :
Obsolete
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
800V
Current - Continuous Drain (Id) @ 25°C :
11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
800 mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id :
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
70nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
2900pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
190W (Tc)
Operating Temperature :
150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-247-3
Package / Case :
TO-247-3
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