IXYS - IXFH26N55Q

KEY Part #: K6408882

[474pcs Stock]


    Part Number:
    IXFH26N55Q
    Manufacturer:
    IXYS
    Detailed description:
    MOSFET N-CH 550V 26A TO-247.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Bridge Rectifiers, Transistors - FETs, MOSFETs - Single, Diodes - RF, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - IGBTs - Single, Diodes - Rectifiers - Arrays, Thyristors - TRIACs and Transistors - JFETs ...
    Competitive Advantage:
    We specialize in IXYS IXFH26N55Q electronic components. IXFH26N55Q can be shipped within 24 hours after order. If you have any demands for IXFH26N55Q, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IXFH26N55Q Product Attributes

    Part Number : IXFH26N55Q
    Manufacturer : IXYS
    Description : MOSFET N-CH 550V 26A TO-247
    Series : HiPerFET™
    Part Status : Obsolete
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 550V
    Current - Continuous Drain (Id) @ 25°C : 26A (Tc)
    Drive Voltage (Max Rds On, Min Rds On) : 10V
    Rds On (Max) @ Id, Vgs : 230 mOhm @ 13A, 10V
    Vgs(th) (Max) @ Id : 4.5V @ 4mA
    Gate Charge (Qg) (Max) @ Vgs : 92nC @ 10V
    Vgs (Max) : ±30V
    Input Capacitance (Ciss) (Max) @ Vds : 3000pF @ 25V
    FET Feature : -
    Power Dissipation (Max) : 375W (Tc)
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Through Hole
    Supplier Device Package : TO-247AD (IXFH)
    Package / Case : TO-247-3