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  5. FDS6679AZ

ON Semiconductor - FDS6679AZ

KEY Part #: K6417831

FDS6679AZ Pricing (USD) [245688pcs Stock]

  • 1 pcs$0.15055
  • 2,500 pcs$0.14509
Part Number:
FDS6679AZ
Manufacturer:
ON Semiconductor
Detailed description:
MOSFET P-CH 30V 13A 8-SOIC.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - RF, Transistors - Bipolar (BJT) - Arrays, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - IGBTs - Single, Diodes - Rectifiers - Single, Transistors - FETs, MOSFETs - Single, Transistors - Bipolar (BJT) - Arrays, Pre-Biased and Diodes - Bridge Rectifiers ...
Competitive Advantage:
We specialize in ON Semiconductor FDS6679AZ electronic components. FDS6679AZ can be shipped within 24 hours after order. If you have any demands for FDS6679AZ, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDS6679AZ Product Attributes

Part Number : FDS6679AZ
Manufacturer : ON Semiconductor
Description : MOSFET P-CH 30V 13A 8-SOIC
Series : PowerTrench®
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 13A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 9.3 mOhm @ 13A, 10V
Vgs(th) (Max) @ Id : 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 96nC @ 10V
Vgs (Max) : ±25V
Input Capacitance (Ciss) (Max) @ Vds : 3845pF @ 15V
FET Feature : -
Power Dissipation (Max) : 2.5W (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SOIC
Package / Case : 8-SOIC (0.154", 3.90mm Width)

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